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| TLP747G TOSHIBA Photocoupler GaAs Ired & Photo-Thyristor TLP747G Office Machine Household Use Equipment Solid State Relay Switching Power Supply The TOSHIBA TLP747G consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. * * * * * Peak off-state voltage: 400 V (min.) Trigger LED current: 15 mA (max.) On-state current: 150 mA (max.) UL recognized: UL1577, file No. E67349 BSI approved: BS EN60065: 2002 Certificate No. 7364 BS EN60950-1: 2002 Certificate No. 7365 * * * SEMCO approved:EN60065,EN60950-1,EN60335-1 Certificate no.302586 Isolation voltage: 4000 Vrms (min.) Option (D4) type VDE approved: DIN EN 60747-5-2, Certificate No. 40009373 Maximum operating insulation voltage: 630, 890 VPK Highest permissible over voltage: 6000, 8000 VPK (Note) When a EN 60747-5-2 approved type is needed, please designate the "option (D4)" TOSHIBA Weight: 0.42 g 11-7A8 Unit in mm Pin Configuration (top view) 1 6 5 4 * Creepage distance Clearance 7.62mm pich standard type : 7.0mm (min.) : 7.0mm (min.) 10.16mm pich TLPxxxF type 8.0mm (min.) 8.0mm (min.) 0.5mm (min.) 2 3 Insulation thickness : 0.5mm (min.) 1 : Anode 2 : Cathode 3 : NC 4 : Cathode 5 : Anode 6 : Gate 1 2007-10-01 TLP747G Absolute Maximum Ratings (Ta = 25C) Characteristic Forward current Forward current derating (Ta 39C) LED Peak forward current (100s pulse, 100pps) Reverse voltage Junction temperature Peak forward voltage (RGK = 27k) Peak reverse voltage (RGK = 27k) On-state current On-state current derating (Ta 25C) Detector Peak on-state current (100 s pulse, 120pps) Peak one cycle surge current Peak reverse gate voltage Power dissipation Power dissipation derating (Ta 25C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10s) Total package power dissipation Total package power dissipation derating (Ta 25C) Isolation voltage (AC, 1min., R.H. 60%) (Note) Symbol IF IF / C IFP VR Tj VDRM VRRM IT(RMS) IT / C ITP ITSM VGM PD PD / C Tj Tstg Topr Tsol PT PT / C BVS Rating 60 -0.7 1 5 125 400 400 150 -2.0 3 2 5 150 -2.0 100 -55~125 -40~100 260 250 -3.3 4000 Unit mA mA / C A V C V V mA mA / C A A V mW mW / C C C C C mW mW / C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note) Device considered a two terminal device: Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Operating temperature Gate to cathode resistance Gate to cathode capacity Symbol VAC IF Topr RGK CGK Min. 20 -25 Typ. 27 0.01 Max. 120 25 85 33 0.1 Unit Vac mA C k F Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP747G Individual Electrical Characteristics (Ta = 25C) Characteristic Forward voltage LED Reverse current Capacitance Off-state current Symbol VF IR CT IDRM IF = 10mA VR = 5V V = 0, f = 1MHz VAK = 400V RGK = 27k VKA = 400V RGK = 27k ITM = 100mA RGK = 27k VAK = 280V, RGK = 27k V = 0, f = 1MHz Anode to gate Gate to cathode Ta = 25C Ta = 100C Ta = 25C Ta = 100C Test Condition Min. 1.0 5 Typ. 1.15 30 10 1 10 1 0.9 0.2 10 20 350 Max. 1.3 10 5000 100 5000 100 1.3 Unit V A pF nA A nA A V mA V / s pF Reverse current Detector On-state voltage Holding current Off-state dv / dt Capacitance IRRM VTM IH dv / dt Cj Coupled Characteristics (Ta = 25C) Characteristic Trigger LED current Turn-on time Coupled dv / dt Capacitance (input to output) Isolation resistance Symbol IFT ton dv / dt CS RS Test Condition VAK = 6V, RGK = 27k IF = 30mA, VAA = 50V RGK = 27k VS = 500V, RGK = 27k VS = 0, f = 1MHz VS = 500V, R.H. 60% AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. 500 1x10 12 Typ. 10 0.8 10 14 Max. 15 Unit mA s V / s pF Vrms Vdc 4000 10000 10000 3 2007-10-01 TLP747G IF - Ta 100 250 IT (RMS) - Ta Allowable forward current IF (mA) 80 200 60 R.M.S. on-state current IT (RMS) (mA) 60 100 120 150 40 100 20 50 0 -20 0 20 40 80 0 -20 0 20 40 60 80 100 120 Ambient temperature Ta (C) Ambient temperature Ta (C) IFP - DR Allowable pulse forward current IFP (mA) 3000 Pulse width 100s Ta = 25C 100 50 30 Ta = 25C IF - V F 500 300 (mA) Forward current IF 10-3 10-2 10-1 100 1000 10 5 3 100 50 30 1 0.5 0.3 10 3 3 3 3 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Duty cycle ratio DR Forward voltage VF (V) VF / Ta - IF -3.2 1000 500 300 IFP - VFP Forward voltage temperature coefficient VF / Ta (mV / C) -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 Pulse forward current IFP (mA) -2.8 100 50 30 10 5 3 Pulse width 10s Repetitive frequency = 100Hz Ta = 25C 0.3 0.5 1 3 5 10 30 50 1 0.6 1.0 1.4 1.8 2.2 2.6 Forward current IF (mA) Pulse forward voltage VFP (V) 4 2007-10-01 TLP747G ton - IF 30 Ta = 25C 200 dv / dt - RGK Ta = 25C RL = 100 VAA = 50V Turn-on time ton (s) Critical rate of rise of off-state voltage dv / dt (V / s) 20 100 VAK = 200V 50 30 400V RGK = 10k 10 27k 0 0 10 20 30 40 Forward current IF (mA) 10 5 1 3 5 10 30 50 100 IFT - Ta Trigger led current IFT (mA) 20 VAK = 6V RL = 100 10 RGK = 10k Gate-cathode resistance RGK (K) 27k 5 IFT - RGK 100 Ta = 25C VAK = 6V RL = 100 Trigger led current IFT (mA) 3 0 50 30 20 40 60 80 100 Ambient temperature Ta (C) 10 IH - Ta 0.7 5 (mA) 0.5 Holding current IH RGK = 10k 2 1 27k 3 5 10 30 50 100 200 0.3 Gate-cathode resistance RGK (K) 0.1 0 20 40 60 80 100 Ambient temperature Ta (C) 5 3 IH - RGK Ta = 25C Critical rate of rise of off-state voltage dv / dt (V / s) Holding current IH Ta = 85C 500 VAK = 400V 300 R GK = 27k 100 50 30 (mA) dv / dt - CGK 1 0.5 0.3 10 5 0.001 0.003 0.005 0.01 0.1 1 3 5 10 30 50 100 200 Gate-cathode capacitance CGK (F) Gate-cathode resistance RGK (K) 5 2007-10-01 TLP747G RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01 |
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